Peer-Reviewed Journal Details
Mandatory Fields
Phan T.;Farrell R.;Lee S.
2009
May
Microwave and Optical Technology Letters
9.1 dBm IIP3 36 dB gain controllable LNA for WCDMA in 0.13-μm CMOS
Published
()
Optional Fields
CMOS High linearity Lna Low-power Variable gain control WCDMA
51
5
1385
1388
This article presents a low-power, high-linearity cascode-type low noise amplifier (LNA) with 36 dB of variable gain for the WIDE Code Division Multiple Access systems. By enhancing the substrate resistance of a common gate transistor along with adopting multiple-gate technique, the linearity is significantly improved. Shunt-current steering is adopted for smooth gain control. Step gain mode is used to further increase the gain control range. The main common source transistor is disabled in attenuation mode, saving unwanted power consumption. Measurements show maximum gain of 12.3 dB with S 11 of - 19.5 dB, and S 22 of - 14 dB. The total gain control range is 36 dB. NF is measured as 2 dB and two-tone test shows 9.1 dBm of IIP3. Implemented in 0.13-μm CMOS technology, the LNA consumes only 1.6 mA at maximum gain mode and only 0.2 mA in attenuation mode from 1.2 V supply. Its die size is 0.3 mm 2. © 2009 Wiley Periodicals, Inc.
0895-2477
10.1002/mop.24320
Grant Details